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| HiPerFETTM Power MOSFETs Single MOSFET Die IXFK/IXFX 26N90 IXFK/IXFX 25N90 VDSS IDSS RDS(on) trr 900 V 26 A 0.30 W 250 ns 900 V 25 A 0.33 W 250 ns Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS TJ 150C, RG = 2 W TC = 25C 26N90 25N90 26N90 25N90 26N90 25N90 Maximum Ratings 900 900 20 30 26 25 104 100 26 25 64 3 5 560 -55 ... +150 150 -55 ... +150 V V V V A PLUS 247TM (IXFX) G D S (TAB) TO-264 AA (IXFK) A A G D (TAB) S mJ J V/ns W C C C C Nm/lb.in. 6 10 g g G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions 0.4/6 300 Features * International standard packages * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance - easy to drive and to protect * Fast intrinsic rectifier Applications * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * AC motor control * Temperature and lighting controls Advantages * PLUS 247TM package for clip or spring mounting * Space savings * High power density Symbol Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 900 3.0 TJ = 25C TJ = 125C 26N90 25N90 5.0 200 100 2 0.3 0.33 V V nA mA mA W W VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20 V, VDS = 0 VDS = 0.8 *VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 Note 1 IXYS reserves the right to change limits, test conditions, and dimensions. 98553D (9/99) (c) 2000 IXYS All rights reserved 1-4 IXFK 25N90 IXFX 25N90 IXFK 26N90 IXFX 26N90 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 1 18 28 8.7 VGS = 0 V, VDS = 25 V, f = 1 MHz 800 300 60 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 W (External), 35 130 24 240 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 56 107 10.8 1000 375 S nF pF pF ns ns ns ns nC nC nC 0.22 K/W 0.15 K/W Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 PLUS247TM (IXFX) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 * ID25 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 26N90 25N90 26N90 25N90 26 25 104 100 1.5 250 A TO-264 AA (IXFK) Outline A V ns mC A IF = IS, -di/dt = 100 A/ms, VR = 100 V 1.4 10 Note: 1. Pulse test, t 300 ms, duty cycle d 2 % Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFK 25N90 IXFX 25N90 IXFK 26N90 IXFX 25N90 Figure 1. Output Characteristics at 25OC 20 TJ = 25C VGS = 9V 8V 7V Figure 2. Extended Output Characteristics at 125OC 50 40 TJ = 25C VGS = 9V 8V 7V 6V 15 ID - Amperes ID - Amperes 6V 5V 30 20 5V 10 5 4V 10 4V 0 0 2 4 6 8 10 0 0 4 8 12 16 20 VDS - Volts VCE - Volts Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID 30 TJ = 125C VGS = 9V 8V 7V Figure 4. Admittance Curves 30 25 25 6V ID - Amperes 20 15 10 5 0 0 5 10 15 20 ID - Amperes 5V 20 TJ = 125OC 15 TJ = 25OC 10 5 0 4V 25 2 3 4 5 6 7 VDS - Volts VGS - Volts Figure 5. RDS(on) normalized to 0.5 ID25 value vs. ID 2.4 2.2 RDS(ON) - Normalized RDS(ON) - Normalized 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 10 20 30 40 50 TJ = 25C TJ = 125C VGS = 10V Figure 6. RDS(on) normalized to 0.5 ID25 value vs. TJ 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 25 50 75 100 125 150 ID = 13A VGS = 10V ID = 26A ID - Amperes TJ - Degrees C (c) 2000 IXYS All rights reserved 3-4 IXFK 25N90 IXFX 25N90 IXFK 26N90 IXFX 26N90 Figure 7. Gate Charge 15 12 VDS = 500 V ID = 13 A IG = 10 mA Figure 8. Capacitance Curves 20000 10000 Ciss Capacitance - pF f = 1MHz VGS - Volts 9 6 3 0 Coss 1000 Crss 100 0 50 100 150 200 250 300 350 0 5 10 15 20 25 30 35 40 Gate Charge - nC VDS - Volts Figure 9. Forward Voltage Drop of the Intrinsic 50 Diode 45 40 30 25 Figure10. Drain Current vs. Case Temperature IXF_26N90 ID - Amperes 35 30 25 20 15 10 5 0 TJ = 125oC TJ = 25oC IXF_25N90 ID - Amperes 1.5 20 15 10 5 0 -50 0.0 0.3 0.6 0.9 1.2 -25 0 25 50 75 100 o 125 150 VSD - Volts Case Temperature - C Figure 11. Transient Thermal Resistance 0. 300 0.100 R(th)JC - K/W 0.010 0.001 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds (c) 2000 IXYS All rights reserved 4-4 |
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